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| E XF .-----r = an AMP company RF MOSFET Power Transistor, 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices 12OW, 28V DU28120T Absolute Maximum Ratings at 25C Parameter Symbol V DS Rating 65 Units V Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature StorageTemperature Thermal Resistance I V cc `DS I 20 24 I V * I PD TJ T STG 8JC 269 200 -55 to+150 0.65 w "C "C "C/W I I LETTER DIN A B c D I I m 24.64 lB29 2121 l2.60 622 ml 5.33 10s I I rmcs WI 24.99 1054 21.97 1285 640 4s 559 x33 I 3.30 I I ml .970 720 83.5 I lax se0 no 865 I I A% I .506 I 245 .tio 210 200 d20 1 255 .x0 220 2lo .lr) i E F G H 1 J 1 3.05 N .lO .lS Electrical Characteristics at 25C Input Capacitance Output Capacitance Reverse Capacitance PowerGain C ES C oss C RSS GP 13 60 - 270 240 48 3O:l pF pF pF dB % - V,,=28.0 V,,=28.0 V,,=28.0 Vb,=28.0 V, F=l .O MHz V, Fz1.0 MHz V, F=l .O MHz V. I,,=600 mA, P,,,.=120.0 W, F=175 MHz MHz Drain Efficiency Load Mismatch Tolerance `ID VSWR-T Vbb~28.0 V, I,,=600 V,,=28.0 V, I,,=600 mA, PO,?1 20.0 W, F=l75 mA, PO,,-120.0 W, F=175 MHz Specifications Subject to Change Wiihout Notice. MIA-COM, inc. Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: RF MOSFET Power Transistor, 12OW, 28V DU28120T v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 30 EFFICIENCY vs FREQUENCY W 70 . V I,,=600 mA P, e120 V,,=28 V I,,=600 mA Poe120 W is S g s 20 10 0 50 150 200 50 0 25 50 100 150 175 2vo FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT 200 30 POWER OUTPUT vs SUPPLY VOLTAGE F=175 MHz I,,=600 mA P,,=3.0 W V,,=28 MHz V I ,,=600 mA 100 MHz 175MHz 0.1 0.2 0.3 1 2 3 4 5 6 7 8 9 20 25 ?%I 33 POWER INPUT(W) SUPPLY VOLTAGE(V) Specifications Subject to Change Wiihout Notice. MIA-COM, Inc. North America: Tel. Fax (800) (800) 3662266 618-8883 a Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451 = Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 12OW, 28V DU28120T v2.00 Typical Device Impedance Frequency (MHz) 30 100 175 ?,a,(OHMS) 4.0 - j 8.0 l.O-j2.5 1.0 - i 0.5 Z LOAD (OHMS) 3.4 + j 2.4 2.2+j 1.3 2.2 + i 0.0 VDD=28V, I,,=600 mA, P,,,.=120 Watts Z,, is the series equivalent input impedance of the device from gate to source. is Z LOAD the series equivalent load impedance as measured from drain to ground. RF Test Fixture VGS J3 VDS .I4 P Cl0 II ----I VDS = 26 VOLTS IDQ I 6OOmA lC"I Cl2 - - l3 RF IN Jl - RF OUT 01 Cl u 1 a TM IY nr Tl-- - PARTS UST Cl.C6 C2,C6 c3 C4,Cll c7 c6.cs Cl0 02 Ll ,u L3.L4 TRIMMER CAPACITOR 6+OpF CAPACITOR SopF TRIMMER CAPACITOR 4-+&F MON0Lm-K CIRCUIT CAPACITOR O.OluF TRIMMER CAPACITOR S-16OpF CAPACITOR SoopF CAPACITOR 1ooOpF ELECI-ROLMIC CAPACITOR 6OuF 60 VOLT NO. 12 AWG COPPER WIRE X 0.67 (LOOP 0.4') 6 TURNS OF NO. 16 AWG ENAMEL WIRE ON `0.26'. CLOSE WOUND Rl.R2 Ql BOARD RESISTOR 27K OHMS 0.26 WATT DU26120T FR4 0.062 Specifications Subject to Change Without Notice. MfA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 |
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